Physical review. B./Physical review. B· 2026Q1
Role of local structural variation in x-ray photoelectron spectrum of silicon oxide interfaces
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- 2026year
Short summary
Broad X-ray photoelectron spectroscopy (XPS) lines in silicon oxide on silicon result from a continuous distribution of core-level binding energies, not distinct chemical states, with broadening reaching 5 eV for SiOx (x=1.0).
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Key points
- Broad XPS lines in silicon oxide on silicon arise from a continuous distribution of core-level binding energies.
- Statistical simulations reproduce the observed spectral broadening, reaching 5 eV for SiOx (x=1.0).
- Experimental data from Ar+ sputtered samples (0.23 nm layer-resolved spectra) quantitatively agree with simulation results.
- Local structural variations, not just distinct chemical states, blur spectral fingerprints in oxide XPS.
AI-generated from the title and abstract; the full text is not read.
Abstract
We show that the broad X-ray photoelectron lines of silicon oxide on silicon arise from a continuous statistical distribution of core-level binding energies. Statistical simulations spanning compositions from Si to SiO$_2$ reproduce the full extent of this broadening, reaching 5 eV for SiO$_{1.0}$ , in quantitative agreement with 0.23 nm layer-resolved spectra reconstructed from Ar$^+$ sputtering data. This continuous distribution blurs distinct spectral fingerprints of local structural motifs, thereby challenging conventional chemical state assignment in oxide X-ray photoelectron spectra.
The authors' abstract, as published at the source. Physical review. B./Physical review. B, 2026 · DOI ↗
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Field: Surfaces, Coatings and Films
Surfaces, Coatings and FilmsMaterials Science