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Physical Review Materials· 2026Q1

Oxygen deficiency and valency reconstruction in multiferroic V-doped HfO 2

Vincenzo Fiorentini

Short summary

First-principles calculations reveal that oxygen vacancies in V-doped HfO2 reduce V4+ to V3+, creating local magnetization and screening changes consistent with experimental XPS data.

AI-generated from the title and abstract; the full text is not read.

Key points

  • Oxygen vacancies in V-doped HfO2 reduce V4+ to V3+ by accepting electrons.
  • This valency change alters local magnetization and screening properties.
  • Calculated V core-level shifts match experimental XPS signatures.
  • Experimental V3+/V4+ ratios suggest additional electron sources during growth.

AI-generated from the title and abstract; the full text is not read.

Abstract

The interplay of oxygen deficiency and vanadium multiple valency in the candidate multiferroic V-doped P c a 2 1 hafnia HfO 2 is studied by first-principles calculations. Low-lying V majority gap states accept electrons from oxygen-vacancy donors, reducing their formation energy, and converting nominal V 4 + centers into V 3 + . The resulting local magnetization and screening changes are reflected in the calculated V core-level shifts, which are consistent with the experimentally observed x-ray photoelectron spectroscopy signatures. The calculated V 3 + / V 4 + population ratio determined by oxygen vacancies only matches experiment in reducing conditions, suggesting that additional electron reservoirs may contribute under atomic-layer-deposition growth conditions. A similar scenario also seems to apply to the recently observed multiferroicity in Cr-doped hafnia, where oxygen deficiency is expected from the synthesis route.

The authors' abstract, as published at the source. Physical Review Materials, 2026 · DOI ↗

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Field: Electronic, Optical and Magnetic Materials

Electronic, Optical and Magnetic MaterialsMaterials Science