Physical Review Applied· 2026Q1
Decoding optoelectronic behavior in X 3 B I 3 ( X = Ca, Sr; B = P, As, Sb, Bi) antiperovskite derivatives through many-body perturbation theory
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- Q1SCImago
- 2026year
Short summary
A first-principles study reveals that X$_{3}$BI$_{3}$ antiperovskite derivatives (X=Ca, Sr; B=P, As, Sb, Bi) possess direct bandgaps (2.42-3.02 eV), moderate exciton binding energies (0.258-0.318 eV), and weak-to-intermediate carrier-phonon coupling with polaron mobilities up to 37.19 cm$^2$V$^{-1}$s$^{-1}$, making them promising for optoelectronics.
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Key points
- X$_{3}$BI$_{3}$ antiperovskite derivatives exhibit direct bandgaps ranging from 2.42 to 3.02 eV.
- Exciton binding energies are between 0.258 and 0.318 eV, indicating moderate Coulomb attraction.
- Polaron mobilities reach up to 37.19 cm$^2$V$^{-1}$s$^{-1}$ due to weak to intermediate carrier-phonon coupling.
- These properties suggest suitability for optoelectronic applications.
AI-generated from the title and abstract; the full text is not read.
Abstract
Antiperovskite derivatives have emerged as promising candidates for optoelectronic applications. However, due to the significant computational cost, their excitonic and polaronic properties remain underexplored despite being critical for optoelectronic performance. Here, we present the structural, electronic, optical, excitonic, and polaronic properties of a series of antiperovskite derivatives with the chemical formula X$_{3}$BI$_{3}$ (X = Ca, Sr; B = P, As, Sb, Bi) using state-of-the-art first-principles calculations. All the compounds exhibit direct bandgaps with G$_{0}$W$_{0}$@PBE bandgap ranging from 2.42 to 3.02 eV, optimal for efficient light absorption with minimal energy loss. Exciton binding energies (0.258-0.318 eV) indicate moderate Coulomb attraction, favoring exciton dissociation. Employing the Feynman polaron model, we established the polaronic properties, where weak to intermediate carrier-phonon coupling was observed, with polaron mobilities reaching values up to 37.19 cm$^{2}$V$^{-1}$s$^{-1}$. These properties establish X$_{3}$BI$_{3}$ materials as viable candidates for next-generation optoelectronic devices.
The authors' abstract, as published at the source. Physical Review Applied, 2026 · DOI ↗
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Field: Electrical and Electronic Engineering
Electrical and Electronic EngineeringEngineering