Advanced Functional Materials· 2026Q1
Shallow Trap States Control Electrical Performance of Amorphous Oxide Semiconductor Thin‐Film Transistors
- 1citations
- Q1SCImago
- 2026year
Short summary
Shallow defect states near the conduction band mobility edge, measured by ultrabroadband photoconduction (UP‐DoS) microscopy, accurately predict the electrical performance of amorphous InGaZnO (a‐IGZO) thin‐film transistors (TFTs) without adjustable parameters.
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