Scientific Reports· 2019Q1
Optimal Semiconductors for 3H and 63Ni Betavoltaics
- 61citations
- Q1SCImago
- 2019year
Short summary
4H-SiC and diamond are identified as optimal wide-bandgap semiconductor absorbers for betavoltaic power sources using 3H and 63Ni isotopes, offering a balance of high coupling efficiency and good electronic transport.
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Key points
- 4H-SiC and diamond show optimal performance as semiconductor absorbers for 3H and 63Ni betavoltaics.
- These materials provide a good combination of coupling efficiency with isotope sources and electronic transport properties.
- c-BN is also identified as a promising material due to its ultra-wide bandgap and doping capabilities.
AI-generated from the title and abstract; the full text is not read.
Abstract
Abstract Betavoltaic power sources based on the conversion of radioisotope energy to electrical power are considered an appealing option for remote applications due to extended period of operation and high energy densities. However, to be competitive with other power sources, their efficiency must be increased. This can be done through optimization of the beta source and selection of the semiconductor absorber. This paper evaluates available on the market and developing wideband gap semiconductors as prospective absorbers with 3 H and 63 Ni sources. Simulation results indicate that among wide band gap materials 4H-SiC and diamond are two optimal semiconductors due to the combination of good coupling efficiencies with isotope sources and good electronic transport properties. Additionally, having good coupling efficiency, an ultra-wide bandgap, and the capability for both n- and p-type doping, c-BN is a promising material for betavoltaic applications.
The authors' abstract, as published at the source. Scientific Reports, 2019 · DOI ↗
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Field: Nuclear Energy and Engineering
Nuclear Energy and EngineeringEnergy