Journal of Micromechanics and Microengineering· 2012Q2
A high open-circuit voltage gallium nitride betavoltaic microbattery
- 59citations
- Q2SCImago
- 2012year
Short summary
Researchers have demonstrated a gallium nitride (GaN) betavoltaic microbattery achieving a record open-circuit voltage of 1.64 V using a 63Ni source.
AI-generated from the title and abstract; the full text is not read.
Key points
- Demonstrated a GaN betavoltaic microbattery with a record 1.64 V open-circuit voltage.
- Achieved this voltage using Fe compensation doping in the n-type GaN layer.
- The 2x2 mm2 device operated with a 63Ni source, yielding 568 pA short-circuit current.
- Reported a conversion efficiency of 0.98% for the GaN-based microbattery.
AI-generated from the title and abstract; the full text is not read.
Abstract
A high open-circuit voltage betavoltaic microbattery based on a gallium nitride (GaN) p–i–n homojunction is demonstrated. As a beta-absorbing layer, the low electron concentration of the n-type GaN layer is achieved by the process of Fe compensation doping. Under the irradiation of a planar solid 63Ni source with activity of 0.5 mCi, the open-circuit voltage of the fabricated microbattery with 2 × 2 mm2 area reaches as much as 1.64 V, which is the record value reported for betavoltaic batteries with 63Ni source, the short-circuit current was measured as 568 pA and the conversion effective of 0.98% was obtained. The experimental results suggest that GaN is a high-potential candidate for developing the betavoltaic microbattery.
The authors' abstract, as published at the source. Journal of Micromechanics and Microengineering, 2012 · DOI ↗
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Field: Nuclear Energy and Engineering
Nuclear Energy and EngineeringEnergy