Journal of Applied Physics· 2015Q2
Model of Ni-63 battery with realistic PIN structure
- 32citations
- Q2SCImago
- 2015year
Short summary
A detailed Monte Carlo and Silvaco model for a GaN-based betavoltaic battery, using Ni-63 as a source, accurately predicts device performance.
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Key points
- Developed a detailed model for GaN-based betavoltaic batteries using Ni-63.
- The model combines Monte Carlo simulations with Silvaco device modeling.
- The model accounts for nuclear material behavior, electron-hole pair creation, and carrier collection.
- Model accuracy was verified against experimental data from a GaN p-i-n structure.
AI-generated from the title and abstract; the full text is not read.
Abstract
GaN, with its wide bandgap of 3.4 eV, has emerged as an efficient material for designing high-efficiency betavoltaic batteries. An important part of designing efficient betavoltaic batteries involves a good understanding of the full process, from the behavior of the nuclear material and the creation of electron-hole pairs all the way through the collection of photo-generated carriers. This paper presents a detailed model based on Monte Carlo and Silvaco for a GaN-based betavoltaic battery device, modeled after Ni-63 as an energy source. The accuracy of the model is verified by comparing it with experimental values obtained for a GaN-based p-i-n structure under scanning electron microscope illumination.
The authors' abstract, as published at the source. Journal of Applied Physics, 2015 · DOI ↗
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Field: Nuclear Energy and Engineering
Nuclear Energy and EngineeringEnergy