Applied Physics Letters· 2012Q1

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

Masataka Higashiwaki, Kohei Sasaki, Akito Kuramata, Takekazu Masui et al.

1,784citations
Q1SCImago
2012year

Short summary

Single-crystal Gallium Oxide (Ga2O3) Metal-Semiconductor Field-Effect Transistors (MESFETs) fabricated on β-Ga2O3 (010) substrates exhibit an off-state breakdown voltage over 250 V and an on/off current ratio of 10,000.

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Field: Electronic, Optical and Magnetic Materials

Electronic, Optical and Magnetic MaterialsMaterials Science