IEEE Transactions on Microwave Theory and Techniques· 2012Q1· Review
A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
- 980citations
- Q1SCImago
- 2012year
Short summary
Gallium-nitride (GaN) high-electron-mobility power transistors (HEMTs) enable highly efficient, broadband power amplifiers due to their high power densities and breakdown voltages, surpassing other technologies.
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Condensed Matter PhysicsPhysics and Astronomy