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Science· 2013Q1

Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator

Cui‐Zu Chang, Jinsong Zhang, Xiao Feng, Jie Shen et al.

Short summary

Researchers have experimentally observed the quantum anomalous Hall (QAH) effect in chromium-doped (Bi,Sb)2Te3 thin films, a magnetic topological insulator.

AI-generated from the title and abstract; the full text is not read.

Key points

  • QAH effect observed in chromium-doped (Bi,Sb)2Te3 magnetic topological insulator films.
  • Quantized Hall resistance of h/e(2) achieved at zero magnetic field.
  • Significant drop in longitudinal resistance observed alongside quantized Hall resistance.
  • Longitudinal resistance vanishes under a strong magnetic field while Hall resistance remains quantized.

AI-generated from the title and abstract; the full text is not read.

Abstract

The quantized version of the anomalous Hall effect has been predicted to occur in magnetic topological insulators, but the experimental realization has been challenging. Here, we report the observation of the quantum anomalous Hall (QAH) effect in thin films of chromium-doped (Bi,Sb)2Te3, a magnetic topological insulator. At zero magnetic field, the gate-tuned anomalous Hall resistance reaches the predicted quantized value of h/e(2), accompanied by a considerable drop in the longitudinal resistance. Under a strong magnetic field, the longitudinal resistance vanishes, whereas the Hall resistance remains at the quantized value. The realization of the QAH effect may lead to the development of low-power-consumption electronics.

The authors' abstract, as published at the source. Science, 2013 · DOI ↗

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Field: Atomic and Molecular Physics, and Optics

Atomic and Molecular Physics, and OpticsPhysics and Astronomy