Science· 2014Q1
Quantum spin Hall effect in two-dimensional transition metal dichalcogenides
- 2,052citations
- Q1SCImago
- 2014year
Short summary
First-principles calculations predict large-gap Quantum Spin Hall (QSH) insulators in 2D transition metal dichalcogenides (1T'-MX2), offering a path to topological transistors.
AI-generated from the title and abstract; the full text is not read.
Key points
- Predicted large-gap Quantum Spin Hall (QSH) insulators in 2D transition metal dichalcogenides (1T'-MX2).
- Achieves QSH effect via intrinsic band inversion from structural distortion and spin-orbit coupling.
- Band gap is tunable by vertical electric field and strain.
- Proposes a topological field-effect transistor switched by electric-field-induced topological phase transition.
AI-generated from the title and abstract; the full text is not read.
Abstract
Quantum spin Hall (QSH) effect materials feature edge states that are topologically protected from backscattering. However, the small band gap in materials that have been identified as QSH insulators limits applications. We use first-principles calculations to predict a class of large-gap QSH insulators in two-dimensional transition metal dichalcogenides with 1T' structure, namely, 1T'-MX2 with M = (tungsten or molybdenum) and X = (tellurium, selenium, or sulfur). A structural distortion causes an intrinsic band inversion between chalcogenide-p and metal-d bands. Additionally, spin-orbit coupling opens a gap that is tunable by vertical electric field and strain. We propose a topological field effect transistor made of van der Waals heterostructures of 1T'-MX2 and two-dimensional dielectric layers that can be rapidly switched off by electric field through a topological phase transition instead of carrier depletion.
The authors' abstract, as published at the source. Science, 2014 · DOI ↗
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Field: Atomic and Molecular Physics, and Optics
Atomic and Molecular Physics, and OpticsPhysics and Astronomy