Materials Science in Semiconductor Processing· 2026Q1
Temperature-dependent electrical performance of β-Ga2O3 Schottky barrier diodes under 5 MeV proton irradiation
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- 2026year
Short summary
Proton irradiation of β-Ga2O3 Schottky diodes at 25°C significantly degrades performance, introducing an E C −0.7 eV defect. Performance partially recovers at 50°C-75°C due to thermal annealing, but the defect reappears at 100°C.
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Key points
- 5 MeV proton irradiation at 25°C degrades β-Ga2O3 diode performance, lowering breakdown voltage and carrier concentration.
- An E C −0.7 eV defect is introduced by proton irradiation at 25°C.
- Device performance partially recovers between 50°C and 75°C due to thermal annealing effects.
- The E C −0.7 eV defect reappears at 100°C, indicating a complex temperature-dependent radiation response.
AI-generated from the title and abstract; the full text is not read.
Abstract
This work examines the effects of 5 MeV proton irradiation at a fluence of 1 × 10 13 cm −2 on the electrical characteristics of β-Ga 2 O 3 Schottky barrier diodes over a temperature range of 25 °C to 100 °C. Current–voltage (I-V), capacitance–voltage (C-V), and deep-level transient spectroscopy (DLTS) measurements demonstrate that irradiation at 25 °C causes significant damage, lowering the breakdown voltage and carrier concentration while introducing the E C −0.7 eV defect. Experiments at 50 °C-75 °C reveal that thermal annealing counteracts this damage as the temperature rises, partially recovering device performance. However, the E C −0.7 eV defect reappears at 100 °C. Subsequent 50 °C annealing verifies that these defects are the same type. We further verified this finding by extracting the spatial distributions of the leakage current density and carrier lifetime from our technology computer-aided design (TCAD) simulations. Our work elucidates the critical role of temperature in governing radiation response of β-Ga 2 O 3 .
The authors' abstract, as published at the source. Materials Science in Semiconductor Processing, 2026 · DOI ↗
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Field: Electronic, Optical and Magnetic Materials
Electronic, Optical and Magnetic MaterialsMaterials Science