ACS Applied Electronic Materials· 2026Q1
Rheology-Engineered Non-Aqueous Si3N4/Si Slurries for High-Performance Ceramic Substrates with Enhanced Thermal Management Capability
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- Q1SCImago
- 2026year
Short summary
Optimized non-aqueous Si3N4/Si slurries using Dispersant 421 enable tape casting of uniform green tapes (RSD 0.46%) which, after sintering, yield 0.25 mm thick Si3N4 ceramic substrates with 81.84 W/(m·K) thermal conductivity and 815 MPa flexural strength.
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Key points
- Non-aqueous Si3N4/Si slurries were rheologically engineered for tape casting.
- Dispersant 421 and 41 vol % solid loading yielded green tapes with 0.46% thickness RSD.
- Fabricated 0.25 mm thick Si3N4 substrates achieved 81.84 W/(m·K) thermal conductivity.
- The substrates also demonstrated a flexural strength of 815 ± 27 MPa.
AI-generated from the title and abstract; the full text is not read.
Abstract
Abstract Thin, thermally conductive Si3N4 ceramic substrates are promising candidates for electronic packaging applications, but their fabrication requires precise control of slurry dispersion, rheological behavior, and green-tape uniformity to minimize processing defects. In this work, a non-aqueous Si3N4/Si reactive slurry system is optimized via rheology control for tape casting and reaction bonding. The effects of dispersant type, content, and solid loading on slurry flow behavior and green tape quality are systematically investigated. Dispersant 421 provides the most favorable rheological and dispersion behavior, enabling uniform tape casting at 41 vol % solid loading. The optimized slurry yields green tapes with high thickness uniformity (RSD 0.46%) and homogeneous particle packing. After nitridation and gas-pressure sintering, dense Si3N4 ceramic substrates with a thickness of 0.25 mm are obtained, exhibiting a flexural strength of 815 ± 27 MPa and a thermal conductivity of 81.84 ± 0.64 W/(m·K). The resulting ceramics show a dense microstructure with noticeable translucency, suggesting good structural uniformity. These results establish rheological control as a practical approach for fabricating thin Si3N4 substrates for electronic thermal management.
The authors' abstract, as published at the source. ACS Applied Electronic Materials, 2026 · DOI ↗
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Field: Ceramics and Composites
Ceramics and CompositesMaterials Science