Nano Letters· 2026Q1
Fractional-Quantum Ferroelectrics: A Route to High-Mobility Ferroelectric Semiconductors
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- 2026year
Short summary
Fractional-quantum ferroelectric α-In2Se3 achieves room-temperature electron mobility >70 cm²/Vs, over 10x higher than displacive β′-In2Se3, by avoiding ferroelectric mode scattering.
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Key points
- Fractional-quantum ferroelectric α-In2Se3 shows room-temperature electron mobility >70 cm²/Vs.
- Displacive ferroelectric β′-In2Se3 has mobility limited to <10 cm²/Vs due to ferroelectric and LO phonon scattering.
- Fractional-quantum ferroelectricity decouples polarization from phonon scattering by using discrete atomic displacements.
- Carrier doping in α-In2Se3 further enhances mobility to >300 cm²/Vs at accessible densities.
AI-generated from the title and abstract; the full text is not read.
Abstract
Abstract Ferroelectric semiconductors are promising for multifunctional electronics, yet their typically low carrier mobilities remain a major limitation. Using first-principles phonon-limited transport calculations for monolayer In2Se3, we show that this limitation depends critically on the microscopic origin of ferroelectricity. In displacive β′-In2Se3, low-frequency ferroelectric modes dominate carrier scattering, with additional contributions from longitudinal-optical (LO) phonons, limiting the room-temperature electron mobility to a few cm2/(V s). By contrast, in fractional-quantum ferroelectric α-In2Se3, ferroelectric-mode scattering is absent because polarization arises from discrete lattice-scale atomic displacements rather than soft-mode condensation. Transport is therefore dominated by LO phonons, yielding a room-temperature mobility above 70 cm2/(V s). Carrier doping further screens long-range electron–LO-phonon interactions and raises the mobility beyond 300 cm2/(V s) at experimentally accessible densities. These results establish that fractional-quantum ferroelectricity can decouple robust polarization from strong intrinsic carrier scattering, offering a route toward high-mobility ferroelectric semiconductors.
The authors' abstract, as published at the source. Nano Letters, 2026 · DOI ↗
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Field: Materials Chemistry
Materials ChemistryMaterials Science