IEEE Transactions on Electron Devices· 2017Q1· Review
GaN-on-Si Power Technology: Devices and Applications
- 1,616citations
- Q1SCImago
- 2017year
Short summary
This review details the latest advancements in Gallium Nitride (GaN) on Silicon (Si) power electronics, focusing on normally-off device technologies and circuit applications.
AI-generated from the title and abstract; the full text is not read.
Key points
- Focuses on normally-off device technologies for power switching applications.
- Demonstrates circuit applications that leverage GaN power device performance.
- Compares GaN-on-Si technology against Si superjunction-MOSFET and SiC MOSFET.
- Discusses critical issues for commercialization: cost, reliability, and ease of use.
AI-generated from the title and abstract; the full text is not read.
Abstract
In this paper, we present a comprehensive review and discussion of the state-of-the-art device technology and application development of GaN-on-Si power electronics. Several device technologies for realizing normally off operation that is highly desirable for power switching applications are presented. In addition, the examples of circuit applications that can greatly benefit from the superior performance of GaN power devices are demonstrated. Comparison with other competing power device technology, such as Si superjunction-MOSFET and SiC MOSFET, is also presented and analyzed. Critical issues for commercialization of GaN-on-Si power devices are discussed with regard to cost, reliability, and ease of use.
The authors' abstract, as published at the source. IEEE Transactions on Electron Devices, 2017 · DOI ↗
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Field: Condensed Matter Physics
Condensed Matter PhysicsPhysics and Astronomy