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Journal of the Taiwan Institute of Chemical Engineers· 2026Q1

Co-Ge-Ni phase equilibria and Ni/CoGe interfacial reactions

Man-Hua Lee, Yung-Chun Tsai, Sinn-wen Chen

Short summary

No ternary compounds exist in the Co-Ge-Ni system; two continuous solid solutions, (Co,Ni)₅Ge₃ and (α-Co,Ni), are stable at 800°C and 600°C, with Ge being the dominant diffusion species in Ni/CoGe interfacial reactions.

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Key points

  • No ternary compounds were found in the Co-Ge-Ni system.
  • Two continuous solid-solution phases, (Co,Ni)₅Ge₃ and (α-Co,Ni), exist at 800°C and 600°C.
  • The Ni/CoGe interfacial reaction follows the path Ni/Ni₃Ge/(Co,Ni)₅Ge₃/CoGe.
  • Germanium (Ge) is the dominant diffusing species in Ni/CoGe reactions.
  • Reaction layer thickness decreases significantly with temperature, from 163 μm at 600°C to 1 μm at 300°C (over 7 days vs. 50 days).

AI-generated from the title and abstract; the full text is not read.

Abstract

Background The Co-Ge-Ni ternary system is important for thermoelectric and electronic applications. This study determines the Co-Ge-Ni isothermal sections at 800°C and 600°C. Methods Alloys were prepared from pure constituent elements, equilibrated, and their equilibrium phases were identified. Furthermore, the interfacial reactions between CoGe and Ni at 600°C and 500°C were investigated. The reaction couples were prepared using an annealed CoGe substrate electroplated with Ni. Significant Findings No ternary compound is found. Two continuous solid-solution phases, (Co,Ni)₅Ge₃ and (α-Co,Ni), exist at both 800°C and 600°C. At 800°C, the stable phases along the Co-Ge side are (α-Co,Ni), ε-(Co), (Co,Ni)₅Ge₃, CoGe, CoGe₂, and (Ge), whereas those along the Ge-Ni side are liquid, NiGe, (Co,Ni)₅Ge₃, Ni₃Ge, and (α-Co,Ni). At 600°C, there is no liquid phase, and Co₅Ge₂ and Co₅Ge₇ are stable. The Ni₃Ge phase exhibits significant Co solubility but does not form a continuous solid solution extending to the Co-Ge side. The reaction path of the Ni/CoGe diffusion couples is Ni/Ni₃Ge/(Co,Ni)₅Ge₃/CoGe, and Ge is the dominant diffusion species. The reaction layer thickness is 163 μm at 600°C for 7 days, 56 μm at 500°C for 7 days, and only 1 μm at 300°C for 50 days.

The authors' abstract, as published at the source. Journal of the Taiwan Institute of Chemical Engineers, 2026 · DOI ↗

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