Nano Letters· 2026Q1
Layer Dependent Ferroelectricity and Electromechanically Coupled Polarization in Two-Dimensional 1T′-ReS2
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- 2026year
Short summary
Two-dimensional (2D) 1T′-ReS2 exhibits sliding ferroelectricity, but its mechanism was unclear; this work reveals that observed ferroelectric signals in PFM originate from flexoelectric-like wrinkles, not intrinsic switching, and demonstrates sliding ferroelectricity in even-layer AB-stacked ReS2.
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Key points
- Observed ferroelectric-like signals in 1T′-ReS2 originate from flexoelectric-like wrinkles, not intrinsic ferroelectric switching.
- The correlation between AA/AB stacking and polarization in 1T′-ReS2 was resolved using STEM, DFT, and KPFM.
- Sliding ferroelectricity was demonstrated in even-layer AB-stacked ReS2.
- The findings clarify the fundamental mechanism of ferroelectricity in 1T′-ReS2 and its application potential.
AI-generated from the title and abstract; the full text is not read.
Abstract
Abstract Two-dimensional (2D) van der Waals (vdW) materials with sliding ferroelectricity exhibit an enormous potential for next-generation nanodevices. Among these, 1T′-ReS2 with an ultralow symmetry stands out as a pivotal candidate. However, the fundamental scientific mechanism underlying sliding ferroelectricity in 1T′-ReS2 remains poorly understood due to the complexity of its crystal structure. By integrating STEM, DFT calculations, and KPFM, this work resolves the correlation between AA/AB stacking and polarization in 1T′-ReS2. PFM and STEM characterizations further reveal that the observed ferroelectric-like PFM signals originate from flexoelectric-like wrinkles rather than from intrinsic ferroelectric switching. Finally, device measurements provide evidence of sliding ferroelectricity in even-layer AB-stacked ReS2 and demonstrate its application potential.
The authors' abstract, as published at the source. Nano Letters, 2026 · DOI ↗
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Field: Materials Chemistry
Materials ChemistryMaterials Science